note: all specifications are subject to change without notification. scd 's for these devices should be reviewed by ssdi prior to release. data sheet #: F00029c doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet part number / ordering information 1 / sff 140 _ j _ __ __ | | | | | | | | | | + scre ening 2 / __ = not screen tx = tx level txv = txv level s = s level | | | | + lead option 3 / _ _ = cooper core alloy leads b w = welded copper leads + package : to - 257 sff 140j sff 140jbw 28 amp / 1 00 vo lts 0. 077 w n - channel power mosfet features: rugged construction with polysilicon gate cell low r ds(on) and high transconductance excellent high temperature stability very fast switching speed fast recovery and superior dv/dt p erformance increased rev erse energy capability low input and transfer capacitance for easy paralleling ceramic seals for improved hermeticity hermetically sealed surface mount power package tx, txv, s pace lev el s creening a vailable replacement for irf140/540 types available with enhanced fl exibility cu pins: sff140jb w maximum ratings symbol value units drain ? source voltage v ds 1 00 volts gate ? source voltage v gs 20 volts continu ou s collector current i d 2 8 amps power dissipation t c = 25oc t c = 55oc p d 62.5 47. 5 w operating & storage temperature top & tstg - 55 to +1 50 oc maximum thermal resistance junction to case r q jc 2 oc/w to - 257 pin out: pin1: drain pin2: source pin3: gate pin 1 pin 2 pin 3 suffix: jd suffix: ju suffix: j
note: all specifications are subject to change without notification. scd 's for these devices should be reviewed by ssdi prior to release. data sheet #: F00029c doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - powe r.com sff 140j sff 140jbw electrical characteristics @ t j = 25 o c (unless otherwise specified) symbol min typ max units drain to source breakdown voltage (vgs=0 v, id=250 m a ) bv dss 1 00 ?? ?? volts drain to source on state resistance (vgs=10 v, id=5 0% rated id ) r ds(on) 1 ?? 0.067 0. 077 w on state drain current (vds>id(on) x rds(on) max, vgs= 10 v , id= rated id ) r as (on) 2 ?? 0.125 a gate threshold voltage (vds=vgs, id= 250 m a ) v gs(th) 2.0 2.4 4.0 v forward transconductance ( vds>id(on) x rds(on) max, ids= 6 0% rated id ) g fs 8.7 13 ?? s (mho) zero gate voltage drain current (vds=max rated voltage, vgs=0 v) (v ds=80% rated vds, vgs=0 v, ta=1 5 0 oc ) i dss ?? ?? ?? ?? 25 250 m a gate to source leakage forward gate to source leakage reverse at rated vgs i gss ?? ?? ?? ?? + 100 - 100 na total gate charge gate to source charge gate to drain charge vgs=10 volts 6 0% rated vds 6 0% rated id q g q gs q gd ?? ?? ?? 40 8 19 75 12 35 nc turn on delay time rise time turn on delay time fall time vdd=50% rated vds 6 0% rated id rg= 6.2 w vgs=10 volts td(on) tr td(off) tf ?? ?? ?? ?? 15 72 40 50 23 110 60 75 nsec diode forward voltage ( is= rated id, vgs=0 v, tj=25 oc ) v sd ?? 1.3 2 . 5 v diode reverse recovery time reverse recovery charge t j = 25 oc if= 10 a di/dt=100a/ m sec t rr q rr ?? 0.44 150 0.91 400 1.9 nsec nc input capacitance input capacitance reverse transfer capacitance vgs=0 volts vds=25 volts f =1 mhz c iss c oss c rss ?? ?? ?? 1750 575 125 ?? ?? ?? pf for thermal derating curves and other characteristics please contact ssdi marketing department.
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